Novel Ge-profile design for high-speed SiGe HBTs: modelling and analysis
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/ip-cds_19990626?crawler=true&mimetype=application/pdf
Reference23 articles.
1. Double-diffused graded SiGe-base bipolar transistors
2. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
3. MBE-grown Si/SiGe HBTs with high beta , f/sub T/, and f/sub max/
4. Sub-20 ps ECL circuits with high-performance super self-aligned selectively grown SiGe base (SSSB) bipolar transistors
5. SiGe-HBTs with high fT at moderate current densities
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1. A novel approach for justification of box-triangular germanium profile in SiGe HBTs;Journal of Semiconductors;2015-02
2. Novel microwave power sige heterojunction bipolar transistor with high thermal stability over a wide temperature range;Acta Physica Sinica;2013
3. Effect of Ge profile design on the performance of an n–p–n SiGe HBT-based analog circuit;Microelectronics Journal;2008-12
4. Profile Design Optimization of SiGe Heterojunction Bipolar Transistors for High Speed Applications;Journal of Computational and Theoretical Nanoscience;2008-11-01
5. An Iteration Approach for Optimization of Base Doping Profile in Si BJTs;2007 International Symposium on Integrated Circuits;2007-09
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