Double-diffused graded SiGe-base bipolar transistors-Reference-Cited by-同舟云学术

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Double-diffused graded SiGe-base bipolar transistors

Published:1994-06 Issue:6 Volume:41 Page:1013-1018
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Vook D.,Kamins T.I.,Burton G.,Vande Voorde P.J.,Wang H.-H.,Coen R.,Lin J.,Pettengill D.F.,Yu P.-K.,Rosner S.J.,Turner J.E.,Laderman S.S.,Horng-Sen Fu ,Wang A.S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/7247/00293315.pdf?arnumber=293315

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low Voltage/Low Power Microwave Electronics;RF and Microwave Applications and Systems;2007-12-22

2. Low Voltage/Low Power Microwave Electronics;RF and Microwave Semiconductor Device Handbook;2002-10-28

3. Microscopic analysis of the influence of Ge profiles on the current-noise operation mode of n-Si/p-Si1-xGexheterostructures;Semiconductor Science and Technology;2000-03-01

4. Low frequency conductance voltage analysis of Si/Ge/sub x/Si/sub 1-x//Si heterojunction bipolar transistors;IEEE Transactions on Electron Devices;2000

5. Novel Ge-profile design for high-speed SiGe HBTs: modelling and analysis;IEE Proceedings - Circuits, Devices and Systems;1999

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