Temperature dependence of 2 µm strained-quantum-well InGaAs/InGaAsP/InP diode lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19940222?crawler=true&mimetype=application/pdf
Reference11 articles.
1. Long-wavelength high-efficiency low-threshold InGaAsP/InP MQW lasers with compressive strain
2. 1.5<λ<1.7 μm strained multiquantum well InGaAs/InGaAsP diode lasers
3. Room-temperature operation of MOCVD-grown GaInAs/InP strained-layer multiquantum well lasers in 1.8 μm range
4. Room-temperature operation of MOCVD-grown GaInAs/InP strained-layer multiquantum well lasers in 1.8 μm range
5. Low threshold continuous operation of InGaAs/InGaAsP quantum well lasers at ~2.0 μm
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1. Strain Compensated AlInGaAs/InGaAs/InAs Triangular Quantum Wells for Lasing Wavelength beyond 2 μm;Chinese Physics Letters;2007-10-17
2. 1.8-μm laser diodes based on quantum-size AlInGaAs/InP heterostructures;Semiconductors;2007-07
3. 1.7–1.8 µm Diode lasers based on quantum-well InGaAsP/InP heterostructures;Semiconductors;2003-11
4. High-power 1.7–1.8 μm single-mode laser diodes;Technical Physics Letters;2003-04
5. Light sources for wavelengths > 2 µm grown by MBE on InP using a strain relaxed buffer;IEE Proceedings - Optoelectronics;1998-10-01
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