1.8-μm laser diodes based on quantum-size AlInGaAs/InP heterostructures-Reference-Cited by-同舟云学术

1.8-μm laser diodes based on quantum-size AlInGaAs/InP heterostructures

Published:2007-07 Issue:7 Volume:41 Page:860-864
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Lyutetskiĭ A. V.,Borshchev K. S.,Bondarev A. D.,Nalet T. A.,Pikhtin N. A.,Slipchenko S. O.,Fetisova N. V.,Khomylev M. A.,Marmalyuk A. A.,Ryaboshtan Yu. L.,Simakov V. A.,Tarasov I. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782607070147.pdf

Reference18 articles.

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3. S. O. Slipchenko, N. A. Pikhtin, N. V. Fetisova, et al., Pis’ma Zh. Tekh. Fiz. 29(23), 26 (2003) [Tech. Phys. Lett. 29, 980 (2003)].

4. A. Yu. Andreev, A. Yu. Leshko, A. V. Lyutetskiĭ, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 40, 628 (2006) [Semiconductors 40, 611 (2006)].

5. B. L. Gel’mont, Z. N. Sokolova, and I. N. Yassievich, Fiz. Tekh. Poluprovodn. (Leningrad) 16, 592 (1982) [Sov. Phys. Semicond. 16, 382 (1982)].

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1. High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9−2.0 μm;Quantum Electronics;2021-10-01

2. On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions;Semiconductors;2016-09

3. High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures;Semiconductors;2009-12

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5. Contribution of Auger recombination to saturation of the light-current characteristics in high-power laser diodes (λ = 1.0–1.9 m m);Semiconductors;2008-01