Strain Compensated AlInGaAs/InGaAs/InAs Triangular Quantum Wells for Lasing Wavelength beyond 2 μm
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference17 articles.
1. Novel Helmholtz-based photoacoustic sensor for trace gas detection at ppm level using GaInAsSb/GaAlAsSb DFB lasers
2. Continuous Wave Performance and Tunability of MBE Grown 2.1 μm InGaAsSb/AlGaAsSb MQW lasers
3. Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37μm
4. Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves
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1. InP-based pseudomorphic InAs/InGaAs triangular quantum well lasers with bismuth surfactant;Applied Optics;2017-07-31
2. Effect of Si δ-Doping on the Linear and Nonlinear Optical Absorptions and Refractive Index Changes in InAlN/GaN Single Quantum Wells;Chinese Physics Letters;2016-02
3. Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4 µm;Journal of Crystal Growth;2015-09
4. High-performance InP-based InAs triangular quantum well lasers operating beyond 2 μm;SPIE Proceedings;2014-02-27
5. 2.4 µm InP-based antimony-free triangular quantum well lasers in continuous-wave operation above room temperature;Applied Physics Express;2014-02-26
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