InP-based pseudomorphic InAs/InGaAs triangular quantum well lasers with bismuth surfactant

Author:

Ji W. Y.,Gu Y.,Zhang Y. G.,Ma Y. J.,Chen X. Y.,Gong Q.,Du B.,Shi Y. H.

Funder

National Key Research and Development Program of China

Shanghai Rising-Star Program

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Temperature-independent lasing wavelength of highly stacked InAs quantum dot laser fabricated on InP(311)B substrate with Bi irradiation;Optics Letters;2023-06-12

2. Relationship between epi-wafer photoluminescence and focal plane array performances of InGaAs detectors;Materials Science in Semiconductor Processing;2023-04

3. The magic of III-Vs;Earth and Space: From Infrared to Terahertz (ESIT 2022);2023-01-31

4. The magic of III-Vs;J INFRARED MILLIM W;2022

5. Surfactant effect of Bi on InAs quantum dot laser diode;Japanese Journal of Applied Physics;2022-11-17

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3