High-power 1.7–1.8 μm single-mode laser diodes-Reference-Cited by-同舟云学术

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High-power 1.7–1.8 μm single-mode laser diodes

Published:2003-04 Issue:4 Volume:29 Page:290-293
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Lyutetskii A. V.,Pikhtin N. A.,Slipchenko S. O.,Fetisova N. V.,Leshko A. Yu.,Golikova E. G.,Ryaboshtan Yu. A.,Tarasov I. S.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1573294.pdf

Reference21 articles.

1. J.-S. Wang, H.-H. Lin, and L.-W. Sung, IEEE J. Quantum Electron. QE-34, 1959 (1998).

2. J. Dong, A. Ubukata, and K. Matsumoto, Jpn. J. Appl. Phys. 36, 5468 (1997).

3. M. Mitsuhara, M. Ogasawara, M. Oishi, et al., IEEE Photonics Technol. Lett. 11, 33 (1999).

4. H. K. Choi, G. W. Turner, and S. I. Eglash, IEEE Photonics Technol. Lett. 6, 7 (1994).

5. D. Z. Garbuzov, H. Lee, V. Khalfin, et al., IEEE Photonics Technol. Lett. 11, 794 (1999).

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1. High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures;Semiconductors;2009-12

2. Saturation of light-current characteristics of high-power laser diodes (λ = 1.0–1.8 μm) under pulse operation;Semiconductors;2007-08

3. New physical features of semiconductor lasers at superhigh excitation levels;SPIE Proceedings;2007-06-15

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