Enhancement of barrier height of Au/PNx/InP Schottky diodes by in situ surface treatment
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19950756?crawler=true&mimetype=application/pdf
Reference11 articles.
1. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes
2. High barrier height Au/n-type InP Schottky contacts with a POxNyHz interfacial layer
3. A new method to fabricate Au/n-type InP Schottky contacts with an interfacial layer
4. Barrier Heights of Schottky Junctions on n-InP Treated with Phosphine Plasma
5. Effect of Hydrogen Plasma Treatment on n-InP Surfaces
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