Structural, chemical states, electrical properties and forward transport phenomena of Ti/MnO2/p-InP heterostructure with a transition metal oxide MnO2 interlayer-Reference-Cited by-同舟云学术

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Structural, chemical states, electrical properties and forward transport phenomena of Ti/MnO2/p-InP heterostructure with a transition metal oxide MnO2 interlayer

Published:2024-06 Issue: Volume:683 Page:415957
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Ashajyothi S.,Reddy V. Rajagopal,Kumar A. Ashok^ORCID

Publisher

Elsevier BV

Reference59 articles.

1. Temperature-dependent behavior of Ti/p-InP/ZnAu Schottky barrier diodes;Asubay;Semicond. Sci. Technol.,2008

2. Characterization and modelling of temperature-dependent barrier heights and ideality factor in GaAs Schottky diodes;Kim;Solid State Electron.,2007

3. Physics and Chemistry of III–V Compound Semiconductor Interfaces Ed C W Wilmsen;Williams,1985

4. Influence of the annealing conditions on the properties of InP thin films;Oztas;Mater. Sci. Eng. B,2006

5. Characteristic diode parameters in thermally annealed Ni/p-InP contacts;Turut;J. Semiconduct.,2016

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