Evaluation of electrical parameters of Ni/n-type Si Schottky barrier diodes using polyvinyl alcohol (PVA) as an interfacial layer
Author:
Publisher
AIP Publishing
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0019609
Reference18 articles.
1. Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions
2. Formation of ZnO nanopowders by the simple ultrasound-assisted method: Exploring the dielectric and electric properties of the Au/(ZnO-PVA)/n-Si structure
3. Current-Transport Mechanisms of the Al/(Bi2S3-PVA Nanocomposite)/p-Si Schottky Diodes in the Temperature Range Between 220 K and 380 K
4. Preparation of mixed copper/PVA nanocomposites as an interface layer for fabrication of Al/Cu-PVA/p-Si Schottky structures
5. Frequency and voltage dependence of admittance characteristics of Al/Al 2 O 3 /PVA:n-ZnSe Schottky barrier diodes
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