High barrier height Au/n-type InP Schottky contacts with a POxNyHz interfacial layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference45 articles.
1. InP/InGaAs double heterostructure bipolar transistors grown by MBE
2. Enhancement of effective electron mobility in the channel of InP metal‐insulator‐semiconductor field‐effect transistors
3. N-channel depletion-mode InP FET with enhanced barrier height gates
4. Schottky diode and field‐effect transistor on InP
5. Fully ion-implanted InP JFET with buried p-layer
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