Schottky diode and field‐effect transistor on InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100727
Reference16 articles.
1. InP/InGaAs double heterostructure bipolar transistors grown by MBE
2. Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputers
3. 20‐GHz bandwidth GaAs photodiode
4. GaAs traveling‐wave polarization electro‐optic waveguide modulator with bandwidth in excess of 20 GHz at 1.3 μm
5. Schottky barrier height of n‐InxGa1−xAs diodes
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1. Surface passivation of InGaAs for heterojunction bipolar transistor applications;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2000-03
2. Reduction of Surface Recombination in InGaAs/InP Heterostructures Using UV-Irradiation and Ozone;Japanese Journal of Applied Physics;1999-02-28
3. Passivation of InGaAs/InP heterostructures;MRS Proceedings;1999
4. Electrical characteristics of (n)-InP MIS diodes with a interfacial layer deposited at low temperature;Semiconductor Science and Technology;1997-05-01
5. Formation of PNx/lnP structure byIn Situ remote plasma processes;Journal of Electronic Materials;1996-05
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