Passivation of InGaAs/InP heterostructures

Author:

Driad R.,Lu Z. H.,McKinnon W. R.,Laframboise S.,McAlister S. P.,Poole P. J.,Raymond S.,Charbonneau S.

Abstract

ABSTRACTIn this study we report different surface treatments and device designs that can be used to improve the performance of InGaAs/InP heterostructure devices. The surface properties of InGaAs (100) after sulfur or UV-ozone passivation were investigated by photoluminescence and high energy-resolution X-ray photoelectron spectroscopy. The base leakage current and the dc current gain of InGaAs/InP heterostructure bipolar transistors (HBTs) have been used to evaluate the efficiency of the passivation treatments. Although these treatments successfully passivated large area HBTs, the improved device characteristics degraded after a dielectric was deposited by plasma enhanced chemical vapor deposition (PECVD) or even just with time. Nevertheless, we found a combined surface treatment that is successful even under PECVD deposition – a UV-ozone treatment that produces a sacrificial oxide that is then removed by HF. This approach will be contrasted with a different method based on an optimized HBT layer structure with a thin InP emitter. In this case, the thin layer of depleted InP from the emitter left on the extrinsic base passivates the surface, and no treatment is required.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001

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