Effect of variable body bias technique on pMOSFET NBTI recovery
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el.2009.0787?crawler=true&mimetype=application/pdf
Reference5 articles.
1. Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
2. The negative bias temperature instability in MOS devices: A review
3. Evidence for hydrogen-related defects during NBTl stress in p-MOSFETs
4. Forward body bias for microprocessors in 130-nm technology generation and beyond
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2. Negative bias temperature instability in SOI‐like p‐type metal oxide semiconductor devices;Micro & Nano Letters;2018-08
3. Adaptive Technique for Overcoming Performance Degradation Due to Aging on 6T SRAM Cells;IEEE Transactions on Device and Materials Reliability;2014-12
4. Negative Bias Temperature Instability in (Si)Ge pMOSFETs;Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications;2013-10-19
5. Unification of contemporary negative bias temperature instability models for p-MOSFET energy degradation;Renewable and Sustainable Energy Reviews;2013-10
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