Negative bias temperature instability in SOI‐like p‐type metal oxide semiconductor devices
Author:
Affiliation:
1. College of Computer Science and TechnologyHarbin Engineering UniversityHarbin150001People's Republic of China
2. Key Laboratory of RF Circuits and SystemsMinistry of EducationHangzhou Dianzi UniversityHangzhou310018People's Republic of China
Funder
National Natural Science Foundation of China
Publisher
Institution of Engineering and Technology (IET)
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2018.0012
Reference36 articles.
1. Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation
2. Hot-carrier degradation behavior of thin-film SOI nMOSFET with isolation scheme and buried oxide thickness
3. Total Dose Hardening of Buried Insulator in Implanted Silicon-on-Insulator Structures
4. A Simulation Study of SoI-Like Bulk Silicon MOSFET With Improved Performance
5. A Simulation Study of Hot Carrier Effects in SoI-Like Bulk Silicon nMOS Device
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