AlN/GaN insulated gate HEMTs with HfO2 gate dielectric-Reference-Cited by-同舟云学术

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AlN/GaN insulated gate HEMTs with HfO2 gate dielectric

Published:2009 Issue:8 Volume:45 Page:423
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Deen D.A.,Binari S.C.,Storm D.F.,Katzer D.S.,Roussos J.A.,Hackley J.C.,Gougousi T.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el.2009.3688?crawler=true&mimetype=application/pdf

Reference9 articles.

1. AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

2. AlN/GaN Insulated-Gate HFETs Using Cat-CVD SiN

3. 2.3 nm barrier AlN/GaN HEMTs with insulated gates

4. Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide

5. Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs

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1. Influence of coating thickness on the microstructure, composition and optical properties of aluminum nitride thin films grown on silicon substrates via low-temperature PEALD;Surfaces and Interfaces;2021-12

2. Interfacial and electrical properties of nanolaminated HfO2/Al2O3 dielectrics on GaN with an AlN interlayer;Semiconductor Science and Technology;2019-11-29

3. Comparative Investigation of Interfacial Characteristics between HfO₂/Al₂O₃ and Al₂O₃/HfO₂ Dielectrics on AlN/p-Ge Structure;Korean Journal of Materials Research;2019-08-31

4. AlN/GaN HEMT with Gate Insulation and Current Collapse Suppression Using Thermal ALD ZrO2;Journal of Electronic Materials;2019-08-12

5. AlN passivation effect on Au/GaN Schottky contacts;Thin Solid Films;2019-01

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