Deposition of high-k ZrO2 films on strained SiGe layers using microwave plasma
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20010253?crawler=true&mimetype=application/pdf
Reference8 articles.
1. Maiti, C.K., Chakrabarti, N.B., and Ray, S.K.: ‘Strained silicon heterostructures: materials and devices’, (IEE United Kingdom
2. Electrical properties of ZrO2 gate dielectric on SiGe
3. Characterization of Strained Epitaxial Si1–xGexFilms Grown using Gas Source Molecular Beam Epitaxy
4. ZrO 2 film growth by chemical vapor deposition using zirconium tetra- tert- butoxide
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2. Photoluminescent, morphological and electrical properties of ZrO2 and ZrO2:polyvinyl alcohol composite thin films;Journal of Non-Crystalline Solids;2015-10
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