Leakage current characteristics and the energy band diagram of Al/ZrO2/Si0.3Ge0.7hetero-MIS structures-Reference-Cited by-同舟云学术

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Leakage current characteristics and the energy band diagram of Al/ZrO2/Si0.3Ge0.7hetero-MIS structures

Published:2006-02-24 Issue:4 Volume:21 Page:467-472
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Chakraborty S,Bera M K,Dalapati G K,Paramanik D,Varma S,Bose P K,Bhattacharya S,Maiti C K

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Reliability and integration of ultra-thin gate dielectrics for advanced CMOS

2. Tunneling leakage current in oxynitride: dependence on oxygen/nitrogen content

3. Applications of Silicon?Germanium Heterostructure Devices

4. Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor

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2. Ferroelectricity Induced by Oxygen Vacancies in Rhombohedral ZrO ₂ Thin Films;ENERGY & ENVIRONMENTAL MATERIALS;2023-03-06

3. Ferroelectricity and negative piezoelectric coefficient in orthorhombic phase pure ZrO2 thin films;Applied Materials Today;2023-02

4. Experimental and simulation study of charge transport mechanism in HfTiOx high-k gate dielectric on SiGe heterolayers;Bulletin of Materials Science;2022-02-20

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