Characterization of Strained Epitaxial Si1–xGexFilms Grown using Gas Source Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Characterization of Strained Epitaxial Si1–xGexFilms Grown using Gas Source Molecular Beam Epitaxy

Published:1997-03 Issue:2-3 Volume:43 Page:155-163
ISSN:0377-2063
Container-title:IETE Journal of Research
language:en
Short-container-title:IETE Journal of Research

Author:

Mukhopadhyay M,Bera L K,Ray S K,Sahu S N,Mehta B R,Goswami N,Lal K,Maiti C K

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Computer Science Applications,Theoretical Computer Science

Link

http://www.tandfonline.com/doi/pdf/10.1080/03772063.1997.11415974

Reference34 articles.

1. Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substrates

2. Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxy

3. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

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1. IMPORTANT DEVELOPMENTS IN THE FIELDS OF CRYSTAL GROWTH AND REAL STRUCTURE OF NEARLY PERFECT SINGLE CRYSTALS;Journal of Structural Chemistry;2022-07

2. Ultrathin oxynitride films on strained SiGe layers by a three-step NO/O2/NO process;Solid-State Electronics;2004-01

3. Hafnium oxide gate dielectric for strained-Si1−xGex;Solid-State Electronics;2003-11

4. Structural characterization and effects of annealing on the electrical properties of stacked SiOxNy/Ta2O5ultrathin films on strained-Si0.82Ge0.18substrates;Journal of Physics D: Applied Physics;2003-03-19

5. Electrical properties of stacked gate dielectric (SiO2/ZrO2) deposited on strained SiGe layers;Thin Solid Films;2002-12

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