Small signal and power measurements of AlGaN/GaN HEMT with SiN passivation-Reference-Cited by-同舟云学术

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Small signal and power measurements of AlGaN/GaN HEMT with SiN passivation

Published:2001 Issue:2 Volume:37 Page:130
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Lee Jong-Soo,Vescan A.,Wieszt A.,Dietrich R.,Leier H.,Kwon Young-Se

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20010100?crawler=true&mimetype=application/pdf

Reference4 articles.

1. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

2. Large signal frequency dispersion of AlGaN/GaN heterostructure field effect transistors

3. Broad-band determination of the FET small-signal equivalent circuit

4. A new method for determining the FET small-signal equivalent circuit

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microwave performance assessment of AlGaN/GaN/AlGaN DH-HEMT in terms of scattering parameters and various power gains;Microsystem Technologies;2023-06

2. Investigation of angstrom-thick aluminium oxide passivation layers to improve the gate lag performance of GaN HEMTs;Materials Research Express;2019-07-12

3. Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors;Nanoscale Research Letters;2016-08-23

4. Performance analysis of InSb based QWFET for ultra high speed applications;Journal of Semiconductors;2015-01

5. Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs;IEEE Transactions on Electron Devices;2014-08

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