Investigation of angstrom-thick aluminium oxide passivation layers to improve the gate lag performance of GaN HEMTs
Author:
Funder
TUBITAK
Publisher
IOP Publishing
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/2053-1591/ab2f68/pdf
Reference25 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. GaN-on-Si Power Technology: Devices and Applications
3. AlGaN/GaN HEMT With 300-GHz $f_{\max}$
4. A comparative study of surface passivation on AlGaN/GaN HEMTs
5. Effect of the surface and barrier defects on the AlGaN/GaN HEMT low-frequency noise performance
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1. X-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN;Japanese Journal of Applied Physics;2021-03-01
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