High-performance InGaAs-InGaAlAs 1.83 [micro sign]m lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20000484?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Room-temperature operation of MOCVD-grown GaInAs/InP strained-layer multiquantum well lasers in 1.8 μm range
2. 2.05-μm wavelength InGaAs-InGaAs distributed-feedback multiquantum-well lasers with 10-mW output power
3. 11.5-W CW 1.83-μm diode laser array
4. Ultrahigh temperature and ultrahigh speed operation of 1.3 µm strain-compensated AlGaInAs/InP uncooled laser diodes
5. Low-threshold and high-temperature operation of InGaAlAs-InP lasers
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1. Electromodulation spectroscopy of In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum wells;Superlattices and Microstructures;2009-09
2. Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers;Acta Physica Sinica;2006
3. Influence of substrate misorientation on vibrational properties of In1−x−yGaxAlyAs grown on InP;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-01
4. Long wavelength InGaAs–InGaAlAs–InP lasers grown in MBE;Journal of Crystal Growth;2001-07
5. 90/spl deg/C continuous-wave operation of 1.83-μm vertical-cavity surface-emitting lasers;IEEE Photonics Technology Letters;2000-11
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