Ultrahigh temperature and ultrahigh speed operation of 1.3 µm strain-compensated AlGaInAs/InP uncooled laser diodes
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19951103?crawler=true&mimetype=application/pdf
Reference5 articles.
1. High-temperature modulation dynamics of 1.3 μm Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP compressive-strained multiple-quantum-well lasers
2. High speed semiconductor laser design and performance
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2. Microbeam high-resolution x-ray diffraction in strained InGaAlAs-based multiple quantum well laser structures grown selectively on masked InP substrates;Journal of Applied Physics;2005-03-15
3. Comparison of 1.3-µm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers;Japanese Journal of Applied Physics;2003-12
4. Selective-area growth of high-crystalline-quality InGaAlAs by metal-organic vapor-phase epitaxy;Journal of Crystal Growth;2003-02
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