Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers

Abstract

1.6—1.7μm highly strained InGaAs/InGaAsP distributed feedback lasers was grown and fabricated by low pressure mentalorganic chemical vapor deposition. High quality highly strained InGaAs/InP materials were obtained by using strain buffer layer. Four pairs of highly strained quantum wells were used in the devices and carrier blocking layer was used to improve the temperature characteristics of the devices. The uncoated 1.66μm and 1.74μm lasers with ridge wave guide 3μm wide have low threshold current (14mW at 100mA). In the temperature range from 10℃ to 40℃, the characteristic temperature T0 of the 1.74μm laser is 57K, which is comparable to that of the 1.55μm-wavelength InGaAsP/InP-DFB laser.