GaInAs junction FET fully dry etched by metal organic reactive ion etching technique
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19870871?crawler=true&mimetype=application/pdf
Reference5 articles.
1. Niggebrugge, U., Klug, M., and Garus, G.: A novel process for reactive ion etching of InP using CH4/H2, Karuizawa, Japan 1985),GaAs and related compounds
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