Inductively Coupled Ar/CCl2F4 /Cl2 Plasma Etching of Ge

Abstract

We have investigated the etch rates and the angle subtended for Ge as a function of varied Inductively Coupled Plasma (ICP) power, CCl2F2 flow, and Cl2 flow. The etch rate of Ge increases from 374 to 520 Aå/min as ICP power increases from 400 to 700 W, whereas the etching rate of Ge decreases from 524 to 400 Aå/min as CCl2F2 flow increases from 40 to 80 sccm, respectively. Also, the etching rate of Ge decreases from 467 to 400 Aå/min as Cl2 flow increases from 0 to 20 sccm. As ICP power increases the angle subtended also increases. From the SEM photographs it appears that Ar/CCl2F2 /Cl2 ICP etching causes the presence of carbon-based material in the form of large particles.