Planar embedded GaInAs photodiode on semi-insulating InP substrate for monolithic integration-Reference-Cited by-同舟云学术

Planar embedded GaInAs photodiode on semi-insulating InP substrate for monolithic integration

Published:1986 Issue:13 Volume:22 Page:722
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Dawe P.J.G.,Spear D.A.H.,Thompson G.H.B.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19860494?crawler=true&mimetype=application/pdf

Reference5 articles.

1. Smith, R.G., and Personick, S.D.: ‘Receiver design for optical fibre communication systems’, Kressel, A., Semiconductor devices for optical communication, (Springer-Verlag, Berlin 1982)

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InGaAs PIN photodiodes on semi-insulating InP substrates with bandwidth exceeding 14 GHz;Solid-State Electronics;1995-07

2. Monolithic integration of a thin and short metal‐semiconductor‐metal photodetector with a GaAlAs optical inverted rib waveguide on a GaAs semi‐insulating substrate;Applied Physics Letters;1989-11-06

3. Photodetectors monolithically integrated with optical waveguides: theoretical and experimental study of absorbing layer effects;IEE Proceedings J Optoelectronics;1989

4. The growth and characterization of CdxHg1−xTe (CMT) on GaAs for optical fibre communication devices;Progress in Crystal Growth and Characterization;1989-01

5. Monolithic integration of a short‐length GaInAs photoconductor with a GaAs/GaAlAs optical waveguide on a GaAs semi‐insulating substrate;Applied Physics Letters;1988-12-19