The growth and characterization of CdxHg1−xTe (CMT) on GaAs for optical fibre communication devices-Reference-Cited by-同舟云学术

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The growth and characterization of CdxHg1−xTe (CMT) on GaAs for optical fibre communication devices

Published:1989-01 Issue:1-2 Volume:19 Page:63-81
ISSN:0146-3535
Container-title:Progress in Crystal Growth and Characterization
language:en
Short-container-title:Progress in Crystal Growth and Characterization

Author:

Smith L.M.,Thompson J.,Mackett P.,Jenkin G.T.,Nguyen Duy T.,Gori P.,Cetronio A.,Lanzieri C.,Moccia G.

Publisher

Elsevier BV

Subject

General Engineering

Reference35 articles.

1. The growth of CdHgTe by metalorganic chemical vapour deposition for optical communication devices

2. CMT: The material for fiber optical communication devices

3. Impact ionization rates for electrons and holes in Hg0.3Cd0.7Te in avalanche photodiodes for optical fiber transmission systems at λ = 1.3 μm

4. The growth of highly uniform cadmium mercury telluride by a new MOVPE technique

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selected-area epitaxy of CdTe;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-07

2. Selected-Area Epitaxy of CdTe on GaAs with A Cantilever Shadow Mask;MRS Proceedings;1992

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