InGaAs PIN photodiodes on semi-insulating InP substrates with bandwidth exceeding 14 GHz-Reference-Cited by-同舟云学术

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InGaAs PIN photodiodes on semi-insulating InP substrates with bandwidth exceeding 14 GHz

Published:1995-07 Issue:7 Volume:38 Page:1295-1298
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Wen-Jeng Ho ,Ting-Arn Dai ,Zuon-Ming Chuang ,Wei Lin ,Yuan-Kuang Tu ,Meng-Chyi Wu

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Coaxially mounted 67 GHz bandwidth InGaAs PIN photodiode

2. In0.53Ga0.47As PIN photodiode grown by MOVPE on a semi-insulating InP substrate for monolithic integration

3. Top-illuminated InGaAs/InP p-i-n photodiodes with a 3-dB bandwidth in excess of 26 GHz

4. Planar-junction, top-illuminated GainAs/InP pin photodiode with bandwidth of 25 GHz

5. 20 GHz bandwidth InGaAs photodetector for long-wavelength microwave optical links

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and modeling of an efficient high-speed InGaAs/InP QW waveguide-photodetector;Optical and Quantum Electronics;2023-02-28

2. InGaAs PIN photodetectors integrated and vertically coupled with silicon-on-insulator waveguides;Optical Engineering;2014-05-05

3. Recent developments in photonic devices for telecommunication applications in Taiwan;Optical and Quantum Electronics;1996-10

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