Low threshold 2.72 [micro sign]m GaInAsSb∕ AlGaAsSb multiple-quantum-well laser
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20021126?crawler=true&mimetype=application/pdf
Reference4 articles.
1. Ultralow-threshold (50 A/cm2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μm
2. Room-temperature low-threshold low-loss continuous-wave operation of 2.26 μm GaInAsSb/AlGaAsSb quantum-well laser diodes
3. The effect of increased valence band offset on the operation of 2 μm GaInAsSb-AlGaAsSb lasers
4. 2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers
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1. Performance simulation of an InGaSb/GaSb based quantum well structure for laser diode applications;Physics Letters A;2023-04
2. Quantifying Auger recombination coefficients in type-I mid-infrared InGaAsSb quantum well lasers;Journal of Physics D: Applied Physics;2020-11-11
3. Gallium antimonide (GaSb)-based type-I quantum well diode lasers: recent development and prospects;Semiconductor Lasers;2013
4. Engineering of Ga1−xInxAsySb1−y/GaSb quantum well for III-V based devices emitting near 2.7 μm;IOP Conference Series: Materials Science and Engineering;2010-11-01
5. 2.7-$\mu$m GaSb-Based Diode Lasers With Quinary Waveguide;IEEE Photonics Technology Letters;2009-08
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