Engineering of Ga1−xInxAsySb1−y/GaSb quantum well for III-V based devices emitting near 2.7 μm
Author:
Publisher
IOP Publishing
Subject
General Medicine
Link
http://stacks.iop.org/1757-899X/13/i=1/a=012005/pdf
Reference15 articles.
1. Electronic and structural properties of the pentanary alloy GaxIn1−xPySbzAs1−y−z
2. Effect of substrate surface defects and Te dopant concentration on crystalline quality and electrical characteristics of AlGaAsSb epitaxial layers
3. Determination of electrical and optical parameters of Ga1−xInxAsySb1−y and Ga1−xAlxAsySb1−y thin layers grown on GaSb substrates by IR reflectivity
4. Calculations of the temperature and alloy composition effects on the optical properties of AlxGa1−xAsySb1−y and GaxIn1−xAsySb1−y in the spectral range 0.5–6 eV
5. Tight Binding Modeling of Heterojunction Band Offsets as a Function of Pressure and Composition
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