Effect of substrate surface defects and Te dopant concentration on crystalline quality and electrical characteristics of AlGaAsSb epitaxial layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Mid‐wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices
2. InAs quantum‐well‐base InAs/GaSb hot‐electron transistors
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4. Preparation of GaSb substrates for GaSb and GaInAsSb growth by organometallic vapor phase epitaxy
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2. Dopant incorporation in Al 0.9 Ga 0.1 As 0.06 Sb 0.94 grown by molecular beam epitaxy;Journal of Crystal Growth;2017-04
3. A multi-color quantum well photodetector for mid- and long-wavelength infrared detection;Semiconductor Science and Technology;2011-11-16
4. Engineering of Ga1−xInxAsySb1−y/GaSb quantum well for III-V based devices emitting near 2.7 μm;IOP Conference Series: Materials Science and Engineering;2010-11-01
5. High-Quality GaInAsSb and GaAlAsSb Layers for Thermophotovoltaics Grown by Liquid-Phase Epitaxy;Solid State Phenomena;2010-01
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