GaN nanocolumn arrays with diameter <30 nm prepared by two‐step selective area growth
Author:
Affiliation:
1. Sophia University7‐1 Kioi‐cho Chiyoda‐kuTokyo102Japan
Funder
Japan Society for the Promotion of Science London
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.3259
Reference14 articles.
1. Growth of Self-Organized GaN Nanostructures on $\bf Al_{2}O_{3}(0001)$ by RF-Radical Source Molecular Beam Epitaxy
2. Self-organization of GaN/Al0.18Ga0.82N multi-layer nano-columns on (0001) Al2O3 by RF molecular beam epitaxy for fabricating GaN quantum disks
3. The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
4. InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate
5. InGaN/GaN nanocolumn LEDs emitting from blue to red;Kishino K.;Proc. SPIE,2007
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