High‐performance dual‐channel InGaAs MOSFET for small signal RF applications
Author:
Affiliation:
1. G B Pant Engineering CollegePauriUttarakhandIndia
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.0980
Reference8 articles.
1. Errors Limiting Split-$CV$ Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs
2. A novel digital etch technique for deeply scaled III–V MOSFETs;Lin J.;IEEE Electron Device Lett.,2014
3. Nonplanar InGaAs gate wrapped around field‐effect transistors;Xue F.;IEEE Trans. Electron Devices,2014
4. High‐frequency performance of self‐aligned gate‐last surface channel In0.3Ga0.7As MOSFET;Egard M.;IEEE Electron Device Lett.,2012
5. High electron mobility InGaAs‐GaAs field effect transistor with thermally oxidised AlAs gate insulator;DeMelo C.B.;Electron. Lett.,2000
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