High electron mobility InGaAs-GaAs field effect transistor with thermally oxidised AlAs gate insulator
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20000026?crawler=true&mimetype=application/pdf
Reference6 articles.
1. AlxGa1−xAs–GaAs metal–oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs
2. Hydrogenation of GaAs MISFETs with Al2O3 as the gate insulator
3. An InAlAs/InGaAs metal‐oxide‐semiconductor field effect transistor using the native oxide of InAlAs as a gate insulation layer
4. Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers
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1. High‐performance dual‐channel InGaAs MOSFET for small signal RF applications;Electronics Letters;2015-07
2. InAlAs/InGaAs MOS-MHEMTs by Using Ozone Water Oxidation Treatment;Electrochemical and Solid-State Letters;2010
3. Selective Liquid Phase Oxidation of AlGaAs and Application to AlGaAs∕InGaAs Pseudomorphic High Electron Mobility Transistor;Journal of The Electrochemical Society;2009
4. AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid phase oxidized AlGaAs as gate dielectric;Solid-State Electronics;2005-02
5. GaAs MOSFET Using InAlP Native Oxide as Gate Dielectric;IEEE Electron Device Letters;2004-12
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