InAlAs/InGaAs MOS-MHEMTs by Using Ozone Water Oxidation Treatment-Reference-Cited by-同舟云学术

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InAlAs/InGaAs MOS-MHEMTs by Using Ozone Water Oxidation Treatment

Published:2010 Issue:7 Volume:13 Page:H234
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Hsu Wei-Chou,Lee Ching-Sung,Ho Chiu-Sheng,Lai Ying-Nan,Huang Jun-Chin,Chou Bo-Yi,Kao An-Yung,Yeh Hsuan-Hsien,Wu Chuan-Luan

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference14 articles.

1. Improved breakdown voltage and impact ionization in InAlAs∕InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate

2. Improvement of Impact Ionization Effect and Subthreshold Current in InAlAs/InGaAs Metal–Oxide–Semiconductor Metamorphic HEMT With a Liquid-Phase Oxidized InAlAs as Gate Insulator

3. Selective Liquid-Phase Oxidation of InGaAs and Application to Metal-Oxide-Semiconductor InAlAs∕InGaAs Metamorphic HEMT Without Gate Recess

4. GaAs-MISFETs With Insulating Gate Films Formed by Direct Oxidation and by Oxinitridation of Recessed GaAs Surfaces

5. Oxidation of InAlAs and Its Application to Gate Insulator of InAlAs/InGaAs Metal Oxide Semiconductor High Electron Mobility Transistor

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative Studies on InAlAs/InGaAs MOS-MHEMTs with Different Compressive/Tensile-Strained Channel Structures;ECS Journal of Solid State Science and Technology;2014

2. Embedded-Ge source and drain in InGaAs/GaAs dual channel MESFET;Current Applied Physics;2013-10

3. Investigations of AlGaN/AlN/GaN MOS-HEMTs on Si Substrate by Ozone Water Oxidation Method;IEEE Transactions on Electron Devices;2013-07

4. Characterization and Modeling Analysis for Metal-Semiconductor-Metal GaAs Diodes with Pd/SiO2 Mixture Electrode;PLoS ONE;2012-11-30

5. Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique;Semiconductor Science and Technology;2012-04-27

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