Ultra‐low leakage SRAM design with sub‐32 nm tunnel FETs for low standby power applications-Reference-Cited by-同舟云学术

Ultra‐low leakage SRAM design with sub‐32 nm tunnel FETs for low standby power applications

Author:

Makosiej Adam¹,Gupta Navneet²,Vakul Naga²,Vladimirescu Andrei²,Cotofana Sorin³,Mahapatra Santanu⁴,Amara Amara²,Anghel Costin²

Affiliation:

1. Commissariat a l'Energie Atomique CEA‐LETIGrenobleFrance

2. Institut superieur d'electronique de ParisParisFrance

3. Computer Engineering Laboratory Faculty of Electrical EngineeringMathematics and Computer ScienceDelft University of TechnologyDelftNetherlands

4. Indian Institute of ScienceBangaloreIndia

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

Reference27 articles.

2. Redox‐based resistive switching memories;Waser R.;J. Nanosci. Nanotechnol.,2012

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