An advanced adiabatic logic using Gate Overlap Tunnel FET (GOTFET) devices for ultra-low power VLSI sensor applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing
Link
http://link.springer.com/content/pdf/10.1007/s10470-019-01561-4.pdf
Reference31 articles.
1. Kumar, S. D., Thapliyal, H., Mohammad, A., Singh, V., & Perumalla, K. S. (2016). In 2016 IEEE Computer society annual symposium on VLSI (ISVLSI) (pp. 308–313). https://doi.org/10.1109/ISVLSI.2016.45
2. Thapliyal, H., Varun, T. S. S., & Kumar, S. D. (2017). In 2017 IEEE Computer society annual symposium on VLSI (ISVLSI) (pp. 621–626). https://doi.org/10.1109/ISVLSI.2017.115
3. Kao, K., Verhulst, A. S., Vandenberghe, W. G., Soree, B., Magnus, W., Leonelli, D., et al. (2012). Optimization of gate-on-source-only tunnel FETs with counter-doped pockets. IEEE Transactions on Electron Devices, 59(8), 2070. https://doi.org/10.1109/TED.2012.2200489.
4. Chander, S., Bhowmick, B., & Baishya, S. (2015). Heterojunction fully depleted SOI-TFET with oxide/source overlap. Superlattices and Microstructures, 86, 43. https://doi.org/10.1016/j.spmi.2015.07.030.
5. Schulte-Braucks, C., Pandey, R., Sajjad, R. N., Barth, M., Ghosh, R. K., Grisafe, B., et al. (2017). Fabrication, characterization, and analysis of Ge/GeSn heterojunction p-type tunnel transistors. IEEE Transactions on Electron Devices, 64(10), 4354. https://doi.org/10.1109/TED.2017.2742957.
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. DESIGN AND ANALYSIS OF MEMS-BASED CAPACITIVE POWER INVERTER USING ELECTROSTATIC TRANSDUCTION;Balkan Journal of Electrical and Computer Engineering;2024-03-17
2. Prospects and Challenges of Different Geometries of TFET Devices for IoT Applications;Nanoscience & Nanotechnology-Asia;2023-08
3. Performance Evaluation of Stacked Gate Oxide/High K Spacers Based Gate All Around Device Architectures at 10 nm Technology Node;Silicon;2022-01-20
4. Double‐gate line‐tunneling field‐effect transistor devices for superior analog performance;International Journal of Circuit Theory and Applications;2021-04
5. CNFET-Based Ultra-Low-Power Dual-$$V_{DD}$$ Ternary Half Adder;Circuits, Systems, and Signal Processing;2021-02-16
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3