Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference55 articles.
1. Zhang JG, Fossum LM, Du Y (2005) Physical insights regarding design and performance of independent-gate FinFETs. IEEE Trans Electron Devices 52(10):2198–2206
2. Kumar A, Saini S, Gupta A, Gupta N, Tripathi MM, Chaujar R (2020) Sub-10 nm high-k dielectric SOI-FinFET for HighPerformance low power applications. International Conference on Signal Processing and Communication: 310–314
3. Sreenivasulu B, Narendar V (2021) Performance improvement of spacer engineered n-type SOI FinFET at 3-nm gate length. Int J Electron Commun 137:153803
4. Munjal S, Prakash NR, Kaur J (2021) Evolution of junctionless field effect transistors in semiconductor industry: a review. Int J Innov Sci Eng Technol 8(8):94–103
5. Das UK, Bhattacharyya TK (2020) Opportunities in device scaling for 3-nm node and beyond: FinFET versus GAA-FET versus UFET. IEEE Tran Electron Devices 67(6):2633–2638
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