Author:
Han Ying,Lü Weifeng,Wei Weijie,Zhang Caiyun,Chen Dengke
Funder
National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference34 articles.
1. Evaluating the performances of memristor, FinFET, and graphene TFET in VLSI circuit design;Adesina,2021
2. Considerations for ultimate CMOS scaling;Kuhn;IEEE Trans. Electron. Dev.,2012
3. FinFETs and Other Multi-Gate transistors,2008
4. Opportunities in device scaling for 3-nm node and beyond: FinFET versus GAA-FET versus UFET;Das;IEEE Trans. Electron. Dev.,2020
5. Investigation of device performance for fin angle optimization in FinFET and gate-all-around FETs for 3 nm-node and beyond;Kim;IEEE Trans. Electron. Dev.,2022
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