Impact of technology scaling on the 1∕f noise of thin and thick gate oxide deep submicron NMOS transistors
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/ip-cds_20040991?crawler=true&mimetype=application/pdf
Reference39 articles.
1. The impact of device scaling on the current fluctuations in MOSFET's
2. On the flicker noise in submicron silicon MOSFETs
3. An improved physics-based 1/f noise model for deep sub-micron MOSFETs
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5. A general theory of phase noise in electrical oscillators
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