Low-frequency noise in deep-submicron metal–oxide–semiconductor field-effect transistors
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/ip-cds_20020332?crawler=true&mimetype=application/pdf
Reference28 articles.
1. van der Ziel, A.: ‘Noise in solid state devices and circuits’, (John Wiley and Sons, New York 1986)
2. Random telegraph signals arising from fast interface states in metal‐SiO2‐Si transistors
3. Study of 1/f noise in N-MOSFET's: Linear region
4. Surface mobility fluctuations in metal-oxide-semiconductor field-effect transistors
5. A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon
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