Random telegraph signals arising from fast interface states in metal‐SiO2‐Si transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108453
Reference4 articles.
1. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise
2. Individual, attractive defect centers in the SiO2-Si interface of ?m-sized MOSFETs
3. Random telegraph signals in small MOSFETs after X-ray irradiation
4. Single, individual traps in MOSFETs
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