Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs-Reference-Cited by-同舟云学术

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Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs

Published:2019-12 Issue:12 Volume:53 Page:1568-1572
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Lebedev A. A.,Levinshtein M. E.,Ivanov P. A.,Kozlovski V. V.,Strel’chuk A. M.,Shabunina E. I.,Fursin L.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782619160140.pdf

Reference28 articles.

1. T. Ohshima, T. Yokoseki, K. Murata, T. Matsuda, S. Mitomo, et al., Jpn. J. Appl. Phys. 55, 01AD01 (2016).

2. M. Masunaga, S. Sato, R. Kuwana, I. Hara, and A. Shima, Mater. Sci. Forum 924, 984 (2018).

3. K. Murata et al., Phys. Status Solidi A 214, 1600446 (2017).

4. A. Takeyama et al., Jpn. J. Appl. Phys. 55, 104101 (2016).

5. V. V. Kozlovski, A. A. Lebedev, and E. V. Bogdanova, J. Appl. Phys. 117, 155702 (2015).

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1. Effects of 5 MeV proton irradiation on 4H-SiC lateral pMOSFETs on-state characteristics;Microelectronics Journal;2023-07

2. Low-Frequency Noise Modeling of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistors;Electronics;2022-09-25

3. Commercial P-Channel Power VDMOSFET as X-ray Dosimeter;Electronics;2022-03-16

4. Effect of high temperature irradiation with 15 MeV protons on characteristics of power SiC Schottky diodes;Solid-State Electronics;2021-08

5. Effects of P+-Layer Emitter Profile of Power Diode Structure on Forward Voltage;2020 International Conference on Industrial Engineering, Applications and Manufacturing (ICIEAM);2020-05

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