Author:
Stojadinovi N.,Mani I.,Davidovi V.,Dankovi D.,Djori-Veljkovi S.,Golubovi S.,Dimitrijev S.
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Reference34 articles.
1. Baliga, B.J.: ‘Modern power devices’, (John Wiley, New York 1987)
2. Benda, V., Gowar, J., and Grant, D.A.: ‘Power semiconductor devices’, (John Wiley, New York 1999)
3. An overview of radiation effects on electronics in the space telecommunications environment
4. MOS device degradation due to total dose ionizing radiation in the natural space environment: A review
5. Radiation‐induced mobility degradation inp‐channel double‐diffused metal‐oxide‐semiconductor power transistors at 300 and 77 K
Cited by
18 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献