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MOS device degradation due to total dose ionizing radiation in the natural space environment: A review

  • Published:1990-01 Issue:2 Volume:21 Page:67-81
  • ISSN:0026-2692
  • Container-title:Microelectronics Journal
  • language:en
  • Short-container-title:Microelectronics Journal

Author:

Galloway K.F.,Schrimpf R.D.

Publisher

Elsevier BV

Subject

General Engineering

Reference48 articles.

1. The space radiation environment for electronics;Stassinopoulos,1988

2. Radiation effects on microelectronics in space;Srour,1988

3. The design of radiation-hardened ICs for space: a compendium of approaches,1988

4. Radiation testing of semiconductor devices for space electronics;Pease,1988

5. Ionizing Radiation Effects in MOS Devices and Circuits,1989

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