Radiation‐induced mobility degradation inp‐channel double‐diffused metal‐oxide‐semiconductor power transistors at 300 and 77 K
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353021
Reference12 articles.
1. On-resistance, thermal resistance and reverse recovery time of power MOSFETs at 77 K
2. Effects of radiation‐induced oxide‐trapped charge on inversion‐layer hole mobility at 300 and 77 K
3. Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors
4. A physically based mobility model for MOSFET numerical simulation
5. A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics
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