Has SiGe lowered the noise in transistors?
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/ip-cds_20020320?crawler=true&mimetype=application/pdf
Reference44 articles.
1. Hole mobility enhancement in MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructure inversion layers
2. Heterojunction bipolar transistors using Si-Ge alloys
3. Low-frequency noise in UHV/CVD Si- and SiGe-base bipolar transistors
4. SiGe-channel heterojunction p-MOSFET's
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1. 1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack;Solid-State Electronics;2009-11
2. On the additivity of generation-recombination spectra Part 3: The McWhorter model for 1/f noise in MOSFETs;Physica B: Condensed Matter;2005-03
3. Photoemission spectra and band structure calculations of Ca1−xSrxRuO3;Physica B: Condensed Matter;2004-12
4. LOW FREQUENCY NOISE IN SUB-0.1μmSiGepMOSFETs, CHARACTERISATION AND MODELING;Fluctuation and Noise Letters;2004-06
5. Characterization and modeling of low-frequency noise in sub-0.1-μm SiGe pMOSFETs;SPIE Proceedings;2004-05-25
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