1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack-Reference-Cited by-同舟云学术

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1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack

Published:2009-11 Issue:11 Volume:53 Page:1177-1182
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Yan L.,Simoen E.,Olsen S.H.,Akheyar A.,Claeys C.,O’Neill A.G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy;Morris;J Appl Phys,2004

2. X-ray photoelectron spectra of low temperature plasma anodized Si0.84Ge0.16 alloy on Si(100): Implications for SiGe oxidation kinetics and oxide electrical properties;Riley;J Appl Phys,1999

3. Mobility enhancement in surface channel SiGe PMOSFETs with HfO2 gate dielectrics;Shi;Electron Dev Lett, IEEE,2003

4. Characterization and profile optimization of SiGe pFETs on silicon-on-sapphire;Mathew;Electron Dev, IEEE Trans,1999

5. Low-Frequency noise in Si1−x Gex p-channel metal oxide semiconductor field-effect transistors;Tsuchiya;Jpn J Appl Phys,2001

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. (Invited) Low Frequency Noise Performance of State-of-the-Art and Emerging CMOS Devices;ECS Transactions;2012-04-27

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