Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1811784
Reference22 articles.
1. Design of Si/SiGe heterojunction complementary metal-oxide-semiconductor transistors
2. Valence band engineering in strained-layer structures
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